Published January 30, 2015 | Version v1
Journal article Metadata-only

Intersubband absorption modulation in the GaAs/AlGaAs double tunnel-coupled quantum wells

Creators

  • 1. Department of Physics of Semiconductors and Nanoelectronics, St. Petersburg Polytechnic University, 29 Polytechnicheskaya str., St. Petersburg 195251 (Russian Federation)
  • 2. Ioffe Physical-Technical Institute, 26 Polytechnicheskaya str., St. Petersburg 194021 (Russian Federation)

Description

Structures with multiple doped double tunnel-coupled GaAs/AlGaAs quantum wells were grown and formed in mesa configuration. Positions of the energy levels have been verified with interband photoluminescence measurements. Temperature modulation of the intersubband absorption spectra was registered. Intersubband absorption modulation under transverse electric field was detected and explained

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/586/1/012012

Additional details

Identifiers

DOI
10.1088/1742-6596/586/1/012012;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
586
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
16. Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics
Dates
24-28 Nov 2014
Place
St Petersburg (Russian Federation)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47029135
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ABSORPTION SPECTRA; ALUMINIUM ARSENIDES; DOPED MATERIALS; ELECTRIC FIELDS; ENERGY LEVELS; GALLIUM ARSENIDES; MODULATION; PHOTOLUMINESCENCE; QUANTUM WELLS
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; SPECTRA