Published 1974
| Version v1
Report
Restricted
Effect of ionizing radiation on current transport through the channel of a MOS-fieldeffect-transistor
Description
no abstract available
Availability note (English)
MF available from INIS under the Report Number.
Files
Restricted
The record is publicly accessible, but files are restricted to users with access.
Additional details
Additional titles
- Original title (German)
- Einfluss einer ionisierenden Strahlung auf den Stromtransport durch den Kanal eines MOS-Feldeffekttransistors
Publishing Information
- Imprint Pagination
- 6 p.
- Report number
- AED-Conf--74-089-047
Conference
- Title
- Spring meeting of the Arbeitskreis Festkoerperohysik of the Deutsche Physikalische Gesellschaft.
- Dates
- 1 Apr 1974.
- Place
- Freudenstadt, F.R. Germany.
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 6158759
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE CARRIERS; DISLOCATIONS; ELECTRON BEAMS; INTERSTITIALS; IRRADIATION; KEV RANGE; MOSFET; SPACE CHARGE
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY RANGE; LEPTON BEAMS; LINE DEFECTS; MOS TRANSISTORS; PARTICLE BEAMS; POINT DEFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- 7 figs.