Published September 1, 2011 | Version v1
Journal article

Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

  • 1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
  • 2. MST-8: Structure-Property Relations Group, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  • 3. Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

Description

We use a reaction-diffusion model to demonstrate that buried interfaces in polycrystalline composites simultaneously reduce both the concentrations and the fluxes of radiation-induced defects. The steady-state radiation-induced defect concentrations, however, are highly sensitive to the interface sink strength η. Materials containing a large volume fraction of interfaces may therefore be resistant to multiple forms of radiation-induced degradation, such as swelling and hardening, as well as to embrittlement by solute segregation, provided that the interfaces have suitable η values.

Additional details

Identifiers

Publishing Information

Journal Title
Physical Review. B, Condensed Matter and Materials Physics
Journal Volume
84
Journal Issue
10
Journal Page Range
p. 104102-104102.5
ISSN
1098-0121

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43074520
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DEFECTS; DIFFUSION; EMBRITTLEMENT; HARDENING; INTERFACES; MATERIALS; PHYSICAL RADIATION EFFECTS; POLYCRYSTALS; REDUCTION; SEGREGATION; SIMULATION; STEADY-STATE CONDITIONS
Descriptors DEC
CHEMICAL REACTIONS; CRYSTALS; RADIATION EFFECTS

Optional Information

Notes
(c) 2011 American Institute of Physics