Published September 1, 2011
| Version v1
Journal article
Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume
- 1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
- 2. MST-8: Structure-Property Relations Group, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
- 3. Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
Description
We use a reaction-diffusion model to demonstrate that buried interfaces in polycrystalline composites simultaneously reduce both the concentrations and the fluxes of radiation-induced defects. The steady-state radiation-induced defect concentrations, however, are highly sensitive to the interface sink strength η. Materials containing a large volume fraction of interfaces may therefore be resistant to multiple forms of radiation-induced degradation, such as swelling and hardening, as well as to embrittlement by solute segregation, provided that the interfaces have suitable η values.
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 84
- Journal Issue
- 10
- Journal Page Range
- p. 104102-104102.5
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43074520
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DEFECTS; DIFFUSION; EMBRITTLEMENT; HARDENING; INTERFACES; MATERIALS; PHYSICAL RADIATION EFFECTS; POLYCRYSTALS; REDUCTION; SEGREGATION; SIMULATION; STEADY-STATE CONDITIONS
- Descriptors DEC
- CHEMICAL REACTIONS; CRYSTALS; RADIATION EFFECTS
Optional Information
- Notes
- (c) 2011 American Institute of Physics