Published October 1, 2018 | Version v1
Journal article

Structural distortion behind the nematic superconductivity in SrxBi2Se3

  • 1. P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991 (Russian Federation)
  • 2. Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation)

Description

An archetypical layered topological insulator Bi2Se3 becomes superconductive upon doping with Sr, Nb or Cu. Superconducting properties of these materials in the presence of in-plane magnetic field demonstrate spontaneous symmetry breaking: 180-rotation symmetry of superconductivity versus 120-rotation symmetry of the crystal. Such behavior brilliantly confirms nematic topological superconductivity. To what extent this nematicity is due to superconducting pairing in these materials, rather than due to crystal structure distortions? This question remains unanswered, because so far no visible deviations from the 3-fold crystal symmetry were resolved in these materials. To address this question we grow high quality single crystals of SrxBi2Se3, perform detailed x-ray diffraction and magnetotransport studies and reveal that the observed superconducting nematicity direction correlates with the direction of small structural distortions in these samples (∼0.02% elongation in one crystallographic direction). Additional anisotropy comes from orientation of the crystallite axes. 2-fold symmetry of magnetoresistance observed in the most uniform crystals well above the critical temperature demonstrates that these structural distortions are nevertheless strong enough. Our data in combination with strong sample-to-sample variation of the superconductive anisotropy parameter are indicative for significance of the structural factor in the apparent nematic superconductivity in SrxBi2Se3. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1367-2630/aae595

Additional details

Identifiers

Publishing Information

Journal Title
New Journal of Physics
Journal Volume
20
Journal Issue
10
Journal Page Range
[13 p.]
ISSN
1367-2630