Temperature-dependent resistive switching for gold/poly(methyl methacrylate)/heavily doped p-type Si/indium devices by incorporating black phosphorus into poly(methyl methacrylate)

This study determines the effect of incorporating black phosphorus (BP) nanosheets into poly(methyl methacrylate) (PMMA) on resistive switching (RS) mechanisms using the temperature-dependent current–voltage characteristics of gold/PMMA:BP/heavily doped p-type Si (p⁺-Si)/indium devices. A gold/PMMA:BP/p⁺-Si/indium device exhibits RS behavior, but a gold/PMMA/p⁺-Si/indium device exhibits set/reset–free current–voltage characteristics. The current in gold/PMMA:BP/p⁺-Si/indium devices is limited by ohmic conduction, the space charge or filled trap. Incorporating BP into PMMA results in a significant increase in the trap density for a PMMA:BP film, which increases the RS performance for gold/PMMA:BP/p⁺-Si/indium devices. (author)