Published September 1973
| Version v1
Journal article
On distribution of impurity atoms and charge-carriers in silicon while doping by the method of recoil atoms and on the application of the method for improving contact resistivity
Creators
- 1. Gor'kovskij Gosudarstvennyj Univ. (USSR). Issledovatel'skij Fiziko-Tekhnicheskij Inst.
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- О распределении примесных атомов и носителей тока в кремнии при легировании методом атомов отдачи и использовании этого метода для улучшения омичности контактов
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 7
- Journal Issue
- 9
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1722-1726
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 5119588
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM; ANTIMONY 124; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; CRYSTAL DOPING; DIFFUSION; DISTRIBUTION; INTERSTITIALS; RECOILS; SILICON; TIN 121; VERY HIGH TEMPERATURE
- Descriptors DEC
- ANTIMONY ISOTOPES; BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DAYS LIVING RADIOISOTOPES; ELEMENTS; EVEN-ODD NUCLEI; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; METALS; MINUTES LIVING RADIOISOTOPES; NUCLEI; ODD-ODD NUCLEI; POINT DEFECTS; RADIOISOTOPES; SEMIMETALS; TIN ISOTOPES; YEARS LIVING RADIOISOTOPES
Optional Information
- Notes
- For English translation see the journal Sov. Phys. - Semicond.