Published June 1982
| Version v1
Journal article
Positron annihilation on the surface of an argon-ion-implanted silicon crystal
- 1. AN Ukrainskoj SSR, Kiev. Inst. Metallofiziki
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Позитронная аннигиляция на поверхности кристалла кремния, имплантированного ионами аргона
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 16
- Journal Issue
- 6
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1085-1087
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 14743984
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANGULAR DISTRIBUTION; ANNIHILATION; ARGON IONS; ELECTRONIC STRUCTURE; GAMMA RADIATION; ION IMPLANTATION; KEV RANGE 100-1000; N-TYPE CONDUCTORS; POSITRONIUM; POSITRONS; SILICON; SURFACES
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CHARGED PARTICLES; DISTRIBUTION; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; INTERACTIONS; IONIZING RADIATIONS; IONS; KEV RANGE; LEPTONS; MATERIALS; MATTER; PARTICLE INTERACTIONS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- Short note. For English translation see the journal Soviet Physics - Semiconductors (USA).