Published December 2011 | Version v1
Journal article Metadata-only

Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering

Creators

  • 1. Key Laboratory of Luminescence and Optical Information (Ministry of Education), Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China)
  • 2. Beijing BOE Optoelectronics Technology CO., LTD, Beijing 100176 (China)

Description

We report on the fabrication and electrical characteristics of Ga-doped ZnO thin film transistors (TFTs). Low Ga-doped (0.7wt%) ZnO thin films were deposited on SiO2/p-Si substrates by rf magnetron sputtering. The GZO TFTs show a mobility of 1.76 cm2/V·s, an on/off ratio of 1.0 × 106, and a threshold voltage of 35 V. The time-dependent instability of the TFT is studied. The VTH shifts negatively. In addition, the device shows a decrease of the on/off ratio, mainly due to the increase of the off-current. The mechanisms of instability are discussed. (cross-disciplinary physics and related areas of science and technology)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/28/12/128502

Additional details

Identifiers

DOI
10.1088/0256-307X/28/12/128502;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
28
Journal Issue
12
Journal Page Range
[3 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45004113
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CALCIUM COMPOUNDS; DOPED MATERIALS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FABRICATION; INSTABILITY; MAGNETRONS; P-TYPE CONDUCTORS; RADIOWAVE RADIATION; SILICON; SILICON OXIDES; SPUTTERING; SUBSTRATES; THIN FILMS; TIME DEPENDENCE; TRANSISTORS; ZINC OXIDES
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; CURRENTS; ELECTROMAGNETIC RADIATION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; MATERIALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS; ZINC COMPOUNDS