Magnetic properties dependence on the coupled effects of magnetic fields on the microstructure of as-deposited and post-annealed Co/Ni bilayer thin films
Creators
- 1. Department of Materials Science, Katholieke Universiteit Leuven, 3001 Leuven (Belgium)
- 2. LISM, Universite de Reims Champagne-Ardenne, BP 1039, 51687 Reims Cedex 2 (France)
- 3. Electromagnetism Division, Istituto Nazionale di Ricerca Metrologica, 10135 Torino (Italy)
- 4. Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 110004 Shenyang (China)
- 5. Università di Torino, Dipartimento di Chimica, 10125 Torino (Italy)
Description
Magnetic films and multilayers are the focus of much attention motivated mainly by their wide range of applications, such as magnetic data storage devices and sensors. The magnetic multilayer structures are normally prepared through physical means of deposition, as molecular beam epitaxy (MBE) or sputtering. However, there are already examples of materials produced by electrochemical routes, which share with the other deposition techniques a high sensitivity of magnetic and transport properties of the samples on their crystallographic and chemical structure. In addition, electrochemical deposition allows growing structures with high aspect ratio, which are not possible to obtain by MBE deposition followed by lithographic processes. The present work investigates the Co/Ni bilayered nanocrystalline films produced through the temperature-elevated electrochemical deposition, and modified by annealing carried out also under an external magnetic field. The results indicate an increase of the coercive field of deposited Co/Ni bilayers, when the electrodeposition process was conducted under magnetic field of 1 T. The annealing processing caused further remarkable increase of the coercive field of as-prepared bilayers that has been preserved under magnetic annealing conditions. The magnetic properties are discussed in terms of samples microstructure. In as-prepared samples the in-plane magnetization was observed, while high temperature treatment, causing microstructural changes in the film, resulted also in appearance of a small component of magnetization oriented perpendicularly to the films' plane that could have been observed by MFM analysis. The induced perpendicular magnetization component in the post-annealed samples was a result of the magnetic field applied in the perpendicular direction to the samples' surface during annealing treatment. - Highlights: • Co deposits were obtained at high electrolyte temperature under applied B-field. • The magnetoelectrodeposition and magnetic annealing were investigated. • The coupled effects of B-field on structure and magnetic properties were determined. • The in-plane anisotropy in as-deposited and post-annealed samples was observed. • The perpendicular component of magnetization was induced by magnetic annealing
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jmmm.2014.07.019Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2014.07.019;
- PII
- S0304-8853(14)00630-1;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 372
- Journal Page Range
- p. 159-166
- ISSN
- 0304-8853
- CODEN
- JMMMDC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46114895
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANISOTROPY; ANNEALING; COBALT; CRYSTALLOGRAPHY; DEPOSITS; ELECTROCHEMISTRY; ELECTRODEPOSITION; ELECTROLYTES; LAYERS; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MAGNETIZATION; MEMORY DEVICES; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; NICKEL; SURFACES; TEMPERATURE RANGE 0400-1000 K; THIN FILMS
- Descriptors DEC
- CHEMISTRY; CRYSTAL GROWTH METHODS; DEPOSITION; ELECTROLYSIS; ELEMENTS; EPITAXY; FILMS; HEAT TREATMENTS; LYSIS; METALS; PHYSICAL PROPERTIES; SURFACE COATING; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.