Electrical conductivity of implanted by inert gas silicon layers, stimulated by oxygen impurities

N- and p-kind silicon samples were irradiated by 129Xe and 84Kr ions with energies 340 and 210 MeV correspondently in the interval of fluences from 1011 up to 1014 ions/cm2. The local electrical conductivity of silicon layer near the projected range of inert gas ions after the high temperature annealing was discovered. It was established that this layer has n-kind of conductivity and it is connected with high level concentration of technological oxygen impurity. Electrical conductivity of layer is the result of new donor generation in temperature interval 550-800 deg C and is kept at high temperature treatments. The creation of conductive layers at big depth follows to wait after annealing of silicon with oxygen impurities implanted by various heavy ions. (author). 8 refs., 9 figs