Published January 7, 2015 | Version v1
Journal article Metadata-only

Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

Creators

  • 1. Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal (Saudi Arabia)
  • 2. Energy Research Institute at Nanyang Technological University (ERI-N), Research Technoplaza, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553 (Singapore)
  • 3. Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom)
  • 4. Stanford Synchrotron Radiation Light source (SLAC), National Accelerator Laboratory, Menlo Park, California 94025 (United States)

Description

Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (<Gd 0.112 at. %) at low oxygen deposition pressure (<25 mTorr) were ferromagnetic at room temperature. Negative magnetoresistance, electric transport properties showed that the ferromagnetic exchange is mediated by a spin-split defect band formed due to oxygen deficiency related defect complexes. Mott's theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level

Additional details

Identifiers

DOI
10.1063/1.4905585;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
117
Journal Issue
1
Journal Page Range
p. 013913-013913.5
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46104904
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CONCENTRATION RATIO; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY BEAM DEPOSITION; FERMI LEVEL; FERROMAGNETISM; GADOLINIUM COMPOUNDS; LASER RADIATION; MAGNETORESISTANCE; OXYGEN; PRESSURE DEPENDENCE; PULSED IRRADIATION; SPIN; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ZINC OXIDES
Descriptors DEC
ANGULAR MOMENTUM; CHALCOGENIDES; DEPOSITION; DIMENSIONLESS NUMBERS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY LEVELS; FILMS; IRRADIATION; MAGNETISM; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; RADIATIONS; RARE EARTH COMPOUNDS; SURFACE COATING; TEMPERATURE RANGE; ZINC COMPOUNDS

Optional Information

Notes
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