Published July 2006
| Version v1
Journal article
Fabrication of SnO2 Thin Film For CO Gas Sensor Using DC Sputtering Method
Description
Fabrication of SnO2 thin film for CO gas sensor using DC sputtering has been carried out. The fabrication was done with sputtering parameters at electrode voltage of 2 kV, current 10 mA, vacuum pressure 5 x 102 Torr, deposition time 30 minutes, 60 minutes and 120 minutes at temperature 250 oC while as gas sputtering was argon. The results showed that SnO2 thin films with parameter process voltage 2 kV, current 10 mA, pressure 5 x 102 Torr, time 120 minutes and temperature deposition was 250 oC have optimum sensitivity to detect CO gas. It's measured at 106.25 ppm. SEM-EDS analysis showed that at this optimum condition of SnO2 thin film was content of oxygen (O) and Sn were 67.37% and 31.73% atoms respectively.(author)
Additional details
Additional titles
- Original title (Indonesian)
- Pembuatan Lapisan Tipis SnO
Publishing Information
- Journal Title
- Jurnal Iptek Nuklir
- Journal Volume
- 9
- Journal Issue
- 2
- Journal Page Range
- p. 21-30
- ISSN
- 1410-6957
INIS
- Country of Publication
- Indonesia
- Country of Input or Organization
- Indonesia
- INIS RN
- 40107195
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DC SYSTEMS; DEPOSITION; ELECTRIC HEATING; GASES; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; SILVER; SPUTTERING; SUBSTRATES; THIN FILMS; TIN OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRON MICROSCOPY; ELEMENTS; ENERGY SYSTEMS; FILMS; FLUIDS; HEATING; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; POWER SYSTEMS; TIN COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Notes
- 10 refs.; 7 figs.