Towards the industrial use of synchrotron X-ray nano-tomography for 3D integration failure analysis
Description
This PhD thesis aims at developing new characterization techniques for 3D integration in microelectronics. More specifically, the focus is set on recent ESRF (European Synchrotron Radiation Facility) beamlines, both for 3D imaging by tomography and for strain measurements by Bragg diffraction.3D integration aims at reducing the global microelectronics devices footprint and connections length, by stacking the dies on top of one another instead of setting them one to another. This new geometry however requires new connections, such as copper pillars (CuP) and copper pads, used in hybrid bonding. The monitoring of their fabrication process requires their imaging in three dimensions, and the measure of the strain inside them. Those measurements must be conducted on large areas (100 μm2), with high resolution (500 nm for strain and 100 nm for imaging). Moreover, given the industrial context of this study, the characterization methods must be as routine and automatic as possible.To answer those needs, several techniques have been developed in this work.Two 3D imaging techniques have been made compatible with the requirements of 3D integration characterization. A Slice and View procedure has been implemented inside a single beam PFIB, leading to large volumes 3D automated imaging. The tomography workflow accessible on the ID6A beamline of the ESRF has been adapted, in order to limit the human intervention and beam times. This leads to possible statistical measurements on this beamline. Strain measurements have been conducted on the ID01 beamline of the ESRF, on silicon and copper stacks meant for direct and hybrid bonding. They allowed for simultaneous local strain measurements in two independent layers of silicon, and in situ measurements in copper. In this work, we show the possibilities of synchrotron based techniques (here, tomography and Bragg diffraction) for the characterization of 3D integration devices. We show that, provided some adjustments, these techniques can be used routinely for the microelectronics field. (author)
Abstract (French)
Ce travail de these vise a developper de nouvelles techniques de caracterisation pour l'integration 3D en micro-electronique. Plus precisement, ce travail porte sur l'imagerie 3D de tels objets et la mesure des contraintes par diffraction de Bragg, realisees sur de recentes lignes de lumiere de l'ESRF (European Synchrotron Radiation Facility). L'integration 3D a pour but de repondre aux besoins de performances de la micro-electronique, en empilant les differents elements constituant les puces au lieu de les placer les uns a cote des autres; ceci permet de limiter la place qu'ils occupent et la longueur des connections. Pour ce faire, de nouvelles connections entre puces ont du etre developpees, telles que les piliers de cuivre et les pads de cuivre, utilises dans le cas du collage hybride. Afin de maitriser leurs procedes de fabrication, il est important de pouvoir caracteriser ces objets, a la fois par des moyens d'imagerie et de mesure de la deformation dans les puces. Ces mesures doivent permettre un large champ de vue (100 μm2), ainsi qu'une haute resolution (50 nm). De plus, afin de satisfaire les besoins en temps de l'industrie microelectronique, les techniques choisies doivent etre aussi rapides et automatiques que possible. Pour satisfaire ces besoins, plusieurs techniques ont ete etudies durant ces travaux de these. Une technique d'imagerie 3D par Slice and View, inspiree de la technique classique du FIB/SEM et implementee dans un PFIB (Plasma Focused Ion Beam), a ete developpee durant ces travaux de these. Elle permet aujourd'hui l'acquisition de larges volumes de maniere automatique. De meme, le procede d'analyse des mesures de tomographies realisees sur la ligne de lumiere ID16A de l'ESRF a ete adapte, afin de limiter au maximum l'intervention humain et le temps global d'analyse. Des mesures de deformations ont egalement ete menees a l'ESRF, sur une ligne de nano-diffraction, ID01. Ces experiences ont ete realisees sur des empilements dedies au collage, hybride ou direct. Il a ete possible de mesurer en une seule experience les deformations presentes dans deux couches de silicium, et de realiser des mesures in situ dans le cuivre. Dans les travaux de these presentes ici, nous montrons les possibilites de techniques synchrotron (imagerie et mesure de deformations) pour la caracterisation d'objets issus de l'integration 3D. Nous montrons que certaines adaptations des techniques existantes peuvent permettre des analyses routinieres a haute resolution pour le milieu de la micro-electronique
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Additional details
Additional titles
- Original title (English)
- Developpement de la tomographie par rayon X en synchrotron pour l'industrie: application a l'analyse de defaillance en integration 3D
Publishing Information
- Imprint Pagination
- 187 p.
- Report number
- FRCEA-TH--13715
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 53069764
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- BRAGG REFLECTION; COPPER; DEFORMATION; EUROPEAN SYNCHROTRON RADIATION FACILITY; FAILURE MODE ANALYSIS; MICROELECTRONICS; SILICON; X RADIATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; METALS; RADIATION SOURCES; RADIATIONS; REFLECTION; SEMIMETALS; SYNCHROTRON RADIATION SOURCES; SYSTEM FAILURE ANALYSIS; SYSTEMS ANALYSIS; TRANSITION ELEMENTS
Optional Information
- Notes
- 123 refs.; Available from the INIS Liaison Officer for France, see the INIS website for current contact and E-mail addresses