Radiation modification of electric properties of monocrystals p-GaSe-Tl

Full text: In Ga-Se system produced two binary connections GaSe and Ga2Se3, which melt congruently at 1210 and 1283 K. The maximum area of solubility on the basis of GaSe is stretched to 3-4 piers. percemt TlSe. From ?-? diagrams condition of system Ga-Se-Tl follows that in it formation on the basis of initial connections of GaSe and TlSe the limited areas of solid solutionis is observed. The maximal domain of solubility on the basis of GaSe is extended to 3-4 piers. Percent TlSe. The favorable combination of electric and optical properties GaSe represents practical interest for creation of electrooptical modulators of light on their basis and various solid-state converters. Sharp anisotropy of chemical bonds (strong ionic-covalent in a layer and weak Van-der-Vaalsovaja between them) allows to spend an effective alloying of monocrystals of GaSe. Essential influence on electric properties of monocrystals of GaSe is rendered concentration and type of the introduced impurity. In the present work presents the results of studying of temperature dependence of conductivity of monocrystals p-GaSe in constant electric fields, and also influences of a gamma-irradiation on their electric properties. The irradiation of samples was conducted on radiating chemical installation of continuous action from source Co60. Energy of gamma-quanta made 1.25 MeV. Electric measurements of samples were conducted after each irradiation