Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors
Creators
- 1. Agnitron Technology Incorporated, Eden Prairie, Minnesota 55346 (United States)
Description
A capacitive wireless sensing scheme is developed that utilizes an AlN/GaN-based dual-channel varactor. The dual-channel heterostructure affords two capacitance plateaus within the capacitance-voltage (CV) characteristic, owing to the two parallel two-dimensional electron gases (2DEGs) located at respective AlN/GaN interfaces. The capacitance plateaus are leveraged for the definition of two resonant states of the sensor when implemented in an inductively-coupled resonant LRC network for wireless readout. The physics-based CV model is compared with published experimental results, which serve as a basis for the sensor embodiment. The bimodal resonant sensor is befitting for a broad application space ranging from gas, electrostatic, and piezoelectric sensors to biological and chemical detection
Additional details
Identifiers
- DOI
- 10.1063/1.4867169;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 104
- Journal Issue
- 9
- Journal Page Range
- p. 093506-093506.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45104476
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM NITRIDES; CAPACITANCE; COMPARATIVE EVALUATIONS; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM NITRIDES; HETEROJUNCTIONS; INTERFACES; PIEZOELECTRICITY; SENSORS; VARIABLE CAPACITANCE DIODES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ELECTRICAL PROPERTIES; ELECTRICITY; EVALUATION; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC