Published 2002 | Version v1
Miscellaneous Metadata-only

AlN films produced by reactive pulse plasma method as dielectric for Si and SiC substrates

Creators

  • 1. Institute of Microelectronics, Warsaw Universiy of Technology, Warsaw (Poland)
  • 2. Faculty of Materials Science and Engineering, Warsaw University of Technology, Warsaw (Poland)

Description

no abstract available

Part of:
Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002

Additional details

Publishing Information

Imprint Title
Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
Imprint Pagination
174 p.
Journal Page Range
p. 87

Conference

Title
4. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
Dates
10-13 Jun 2002
Place
Kazimierz Dolny (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
34075148
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ALUMINIUM NITRIDES; CAPACITANCE; CHEMICAL COMPOSITION; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELLIPSOMETRY; LAYERS; MASS SPECTROSCOPY; MICROELECTRONICS; PLASMA; PULSE TECHNIQUES; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON CARBIDES; SUBSTRATES; THICKNESS
Descriptors DEC
ALUMINIUM COMPOUNDS; CARBIDES; CARBON COMPOUNDS; DIMENSIONS; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTS; MATERIALS; MEASURING METHODS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY

Optional Information

Notes
2 refs, 1 fig.