Published 2003 | Version v1
Miscellaneous Metadata-only

CdTe thin films properties fabricated by hot wall epitaxy

Creators

  • 1. Institute of Semiconductor Physics, NAS Ukraine, Kiev (Ukraine)

Description

no abstract available

Part of:
Abstracts of The European Materials Conference E-MRS 2003 Fall Meeting

Additional details

Publishing Information

Imprint Title
Abstracts of The European Materials Conference E-MRS 2003 Fall Meeting
Imprint Pagination
287 p.
Journal Page Range
p. 117

Conference

Title
European Materials Conference E-MRS 2003 Fall Meeting
Dates
15-19 Sep 2003
Place
Warsaw (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
35101146
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ABSORPTION SPECTRA; BARIUM FLUORIDES; CADMIUM TELLURIDES; CAPACITANCE; CHEMICAL COMPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; EPITAXY; FABRICATION; GOLD; INFRARED SPECTRA; MERCURY COMPOUNDS; OPTICAL PROPERTIES; OPTIMIZATION; PHOTOCONDUCTIVITY; PHOTOELECTRIC EFFECT; SCHOTTKY BARRIER DIODES; SILICON; SILICON OXIDES; SUBSTRATES; TELLURIDES; THIN FILMS
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; BARIUM COMPOUNDS; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; FILMS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; SILICON COMPOUNDS; SPECTRA; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENTS

Optional Information