Published October 2015 | Version v1
Journal article Metadata-only

Growth and Characterization of InAs1–xSbx with Different Sb Compositions on GaAs Substrates

Creators

  • 1. Key Laboratory for Renewable Energy, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
  • 2. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of Renewable Energy, North China Electric Power University, Beijing 102206 (China)

Description

InAs1–xSbx with different compositions is grown by molecular beam epitaxy on (100)-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality and surface morphology. Hall measurements show that the carrier concentration increases with the composition of Sb. The electron mobility decreases initially, when Sb composition exceeds a certain value, and the mobility increases slightly. In this work, we emphasize the comparison of crystal quality, surface morphology and electrical properties of epilayers with different Sb compositions. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/32/10/106801

Additional details

Identifiers

DOI
10.1088/0256-307X/32/10/106801;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
32
Journal Issue
10
Journal Page Range
[4 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
48018998
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CRYSTALS; ELECTRICAL PROPERTIES; ELECTRON MOBILITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MORPHOLOGY; SUBSTRATES; SURFACES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MOBILITY; PARTICLE MOBILITY; PHYSICAL PROPERTIES; PNICTIDES