Electrical properties and structure of boron implanted germanium

Observations are made of crystalline states and measurements of Hall coefficient and conductivity distributions in germanium substrate implanted with 6 × 1013 to 6 × 1017 boron per cm2 at 30 ke V before and after annealing at 500 °C. In the as-implanted specimen at the dose 6 × 1016 cm−2 the concentration of acceptors is more than two orders of magnitude above the maximum solid solubility of boron in germanium. In this case between an amorphous layer and the single crystal a broad (1200 Å) damaged, but high conductivity region exists in which the carriers are generated by the implanted boron atoms and radiation acceptors. The anneal treatment influence on the crystal lattice reordering is investigated by the observation of the implanted surface using electron diffraction technique. [Russian Text Ignored].