Quality control of the SiPM in the application of large HEP experiments

Large-scale high-energy physics (HEP) experiments have strict requirements on the reliability, consistency and service life for the detectors, it is imperative to set up a quality control system for the involved Silicon Photomultipliers (SiPMs). The essential parameters of the SiPMs are numerous, including reversed leakage current, breakdown voltage, dark count rate, gain, photon detection efficiency, pulse high distribution, temperature coefficient and optical crosstalk etc., characterizing of SiPM should follow an optimal measurement procedures and rules to realize the rapid screening and strict quality control. This paper will introduce the new progress of 1 mm × 1 mm large dynamic range SiPM developed in the Novel Device Laboratory, Beijing Normal University, as well as the measurement guidelines and procedures from chips to packaged devices. (authors)