Published 1972
| Version v1
Report
Open
Influence of the amorphous phase on boron atom distributions in ion implanted silicon
Description
no abstract available
Availability note (English)
MF available from INIS under the Report Number.Files
6180426.pdf
Files
(200.7 kB)
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Additional details
Publishing Information
- Imprint Pagination
- 10 p.
- Report number
- BNL--19089
Conference
- Title
- 3. international conference on ion implantation in semi-conductors and other materials.
- Dates
- 11 Dec 1972.
- Place
- Yorktown Heights, New York, USA.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 6180426
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; BORON IONS; BORON 10; DEPTH; DIFFUSION; DISTRIBUTION; ION IMPLANTATION; NEUTRON REACTIONS; SILICON
- Descriptors DEC
- BARYON REACTIONS; BORON ISOTOPES; CHARGED PARTICLES; DIMENSIONS; ELEMENTS; HADRON REACTIONS; HEAT TREATMENTS; IONS; ISOTOPES; LIGHT NUCLEI; NUCLEAR REACTIONS; NUCLEI; NUCLEON REACTIONS; ODD-ODD NUCLEI; SEMIMETALS; STABLE ISOTOPES
Optional Information
- Secondary number(s)
- CONF-721226--3.