Published July 2008
| Version v1
Journal article
Thermal annealing of radiation induced defects in n-Si, irradiated with fast reactor neutrons
- 1. Yinstitut yadernikh doslyidzhen', Kyiv (Ukraine)
Description
Thermal stability of defect clusters in n-Si grown by the Czochralski technique (Cz) and irradiated with fast reactor neutrons has been studied. The effective concentration of carriers (n0 = 1.2 centre dot 1014 cm-3) obtained in silicon after a number of isochronal annealing followed its irradiation to a fluence of fast reactor neutrons Φ = 3.75 centre dot 1013 neutron/cm2 has been described in the framework of the corrected defect cluster model
Additional details
Additional titles
- Original title (Ukrainian)
- Termyichnij vyidpal radyiatsyijnikh defektyiv v n-Si, opromyinenomu shvidkimi nejtronami reaktora
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal (Kyiv)
- Journal Volume
- 53
- Journal Issue
- no.7
- Journal Page Range
- p. 691-696
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 39122776
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; ANNEALING; CHARGE CARRIERS; CRYSTAL DEFECTS; FAST NEUTRONS; IRRADIATION; N-TYPE CONDUCTORS; NEUTRON FLUENCE; PHYSICAL RADIATION EFFECTS; SILICON; SOLID CLUSTERS
- Descriptors DEC
- BARYONS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; ENERGY; FERMIONS; HADRONS; HEAT TREATMENTS; MATERIALS; NEUTRONS; NUCLEONS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS