Published July 16, 1988
| Version v1
Journal article
Electrical properties of Cd-doped p-InSe
Creators
- 1. Kurume Univ., Fukuoka (Japan)
- 2. Miyazaki Univ. (Japan). Dept. of Electronic Engineering
Description
The results of measurements of the hole concentration and the Hall mobility in Cd-doped p-InSe single crystals as functions of temperature are reported and compared with calculated values. Results give evidence that the carrier transport of Cd-doped p-InSe is dominated by the acceptor level at 0.45 eV above the valence band. The temperature dependence of the hole mobility can be well fitted by the combined mobility of the optical phonon and the ionized impurity scatterings
Additional details
Publishing Information
- Journal Title
- Physica Status Solidi A
- Journal Volume
- 108
- Journal Issue
- 1
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K53-K57
- ISSN
- 0031-8965
- CODEN
- PSSAB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 20007796
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM ADDITIONS; CARRIER DENSITY; CARRIER MOBILITY; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY LEVELS; ENERGY-LEVEL DENSITY; HOLES; INDIUM SELENIDES; MONOCRYSTALS; P-TYPE CONDUCTORS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHALCOGENIDES; CRYSTALS; INDIUM COMPOUNDS; MATERIALS; MOBILITY; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- Short note.