Thick lanthanum zirconate buffer layers from water-based precursor solutions on Ni-5%W substrates

In this work, water-based precursor solutions suitable for dip-coating of thick La2Zr2O7 (LZO) buffer layers for coated conductors on Ni-5%W substrates were developed. The solutions were prepared based on chelate chemistry using water as the main solvent. The effect of polymer addition on the maximum crack-free thickness of the deposited films was investigated. This novel solution preparation method revealed the possibility to grow single, crack-free layers with thicknesses ranging 100-280 nm with good crystallinity and an in-plane grain misalignment with average FWHM of 6.55o. TEM studies illustrated the presence of nanovoids, typical for CSD-LZO films annealed under Ar-5%H2 gas flow. The appropriate buffer layer action of the film in preventing the Ni diffusion was studied using XPS. It was found that the Ni diffusion was restricted to the first 30 nm of a 140 nm thick film. The surface texture of the film was improved using a seed layer. - Graphical abstract: Thick LZO buffer layers from water-based precursor solutions were synthesized and their crystallinity, microstructure and buffer layer action were studied. The buffer layer action of the LZO layer was substantial to restrict the Ni penetration within 30 nm of a 140 nm thick film. Highlights: → LZO buffer layers with high thicknesses for use in coated conductors were prepared. → Prepared from water-based solutions. → Polymeric PVP increases the crack-free critical thickness of thick films. → Thick films showed good barrier action against Ni penetration. → Seed layers promote epitaxial growth of thick layers.