Ultrasensitive ppb-level H2S gas sensor at room temperature based on WO3/rGO hybrids
Creators
- 1. University of Chinese Academy of Sciences (China)
- 2. Chinese Academy of Science. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics (China)
- 3. Tongji University. Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering (China)
- 4. The Institute of Dongguan-Tongji University (China)
- 5. UCAS. Hangzhou Institute for Advanced Study (China)
Description
Gas sensors with high performance and low energy consumption are necessary for system integration in the environment monitoring of explosives. High-performance room-temperature hydrogen sulfide (H2S) gas sensors were fabricated based on the hybrids of tungsten oxide (WO3)/reduced graphene oxide (rGO). WO3 nanocubes modified with different contents of rGO were synthesized by acid-based hydrothermal method. The optimal amount of rGO in the composite is 5 wt%, at which the room-temperature operating sensor presents the highest sensitivity of approximately 32.7 to 500 ppb H2S, a fast recovery time of ~ 180 s, as well as an excellent sensing selectivity. The overall improvement in sensing performances demonstrated an important progress made in H2S sensor fabrication for portable and real-time gas detection. The improved gas-sensing performance is attributed to the large specific surface area of the WO3 nanocubes, the formation of WO3/rGO heterojunctions, and the enhanced electron transfer efficiency.
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Materials Science. Materials in Electronics
- Journal Volume
- 31
- Journal Issue
- 6
- Journal Page Range
- p. 5008-5016
- ISSN
- 0957-4522
- CODEN
- JSMEEV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55074318
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- DETECTION; ELECTRON TRANSFER; ENERGY CONSUMPTION; FABRICATION; GRAPHENE; HETEROJUNCTIONS; HYDROGEN SULFIDES; HYDROTHERMAL SYNTHESIS; MONITORING; PERFORMANCE; SENSITIVITY; SENSORS; SURFACE AREA; TUNGSTEN
- Descriptors DEC
- CARBON; CHALCOGENIDES; ELEMENTS; HYDROGEN COMPOUNDS; METALS; NONMETALS; REFRACTORY METALS; SEMICONDUCTOR JUNCTIONS; SULFIDES; SULFUR COMPOUNDS; SURFACE PROPERTIES; SYNTHESIS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020