Mobility, energy gap and dielectric constant in SiOC films

The SiOC films used in this research were prepared by using an inductively coupled plasma chemical vapor deposition (ICPCVD) method, and the carbon concentration in the SiOC films was controlled by using mixed gases of bistrimethylsilymethane (BTMSM) and oxygen. The relations between the carbon concentration and the energy gap and between the energy gap and the dielectric constant were studied. The energy gap ws calculated from the current - voltage relation. The energy gap increased with carbon concentration, but the dielectric constant decreased as the energy gap increased. The mechanism of decreasing dielectric constant with increasing energy gap is discussed in the context of the Penn model