Published January 1990
| Version v1
Journal article
Ion channeling study of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) grown by MBE
- 1. Dept. of Physics and Inst. for Particle-Solid Interactions, State Univ. of New York, Albany, NY (USA)
- 2. Keck Lab. of Engineering, California Inst. of Tech., Pasadena, CA (USA)
- 3. Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA (USA)
Description
Codeposition of Si and Co on a heated Si(111) substrate with a Si/Co ratio much greater than 3 results in epitaxial columns of CoSi2 (χmin ≅ 4%) embedded in high quality epitaxial Si (χmin ≅ 3%). The average lattice distortion (or strain) in CoSi2 columns is estimated by channeling along off-normal axes. Due primarily to constraints by the surrounding Si lattice, the unit cell of the CoSi2 lattice in the columns is elongated perpendicular to the substrate when the average aspect ratio, [height]/[average diameter], of the columns is greater than ≅ 1.4. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research, Section B
- Journal Volume
- 45
- Journal Issue
- 1-4
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 434-437
- ISSN
- 0168-583X
- CODEN
- NIMBE
Conference
- Title
- 9. international conference on ion beam analysis (IBA-9).
- Dates
- 26-30 Jun 1989.
- Place
- Kingston (Canada).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 21068887
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COBALT SILICIDES; FILMS; INTERFACES; ION CHANNELING; MONOCRYSTALS; SILICON; STRAINS; SUBSTRATES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHANNELING; COBALT COMPOUNDS; CRYSTALS; ELEMENTS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS