Published January 2, 1989
| Version v1
Journal article
Laser-assisted photochemical etching of Hg/sub 0.8/Cd/sub 0.2/Te
Creators
- 1. Semiconductor Process and Design Center, Texas Instruments, P.O. Box 655936, M.S. 147, Dallas, Texas 75265
Description
A laser-assisted photochemically driven etching process has been developed for Hg/sub 0.8/Cd/sub 0.2/Te (12 μm material). It is an etch which does not melt the surface of the material or induce mercury migration. Small geometry features (vias less than 10 μm in diameter) with straight-edged sidewalls have been produced. The etching mechanism is a photoenhanced rapid oxidation with subsequent solvation of the oxides
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 54
- Journal Issue
- 1
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 54-56
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20024344
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CADMIUM TELLURIDES; DIFFUSION; ETCHING; LASER RADIATION; MERCURY; MERCURY TELLURIDES; OXIDATION; PHOTOCHEMISTRY
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; CHEMISTRY; ELECTROMAGNETIC RADIATION; ELEMENTS; MERCURY COMPOUNDS; METALS; RADIATIONS; TELLURIDES; TELLURIUM COMPOUNDS