Channeling effect in the dead layer of ion implanted, position-sensitive detectors in heavy-ion studies

Channeling in the dead layer and surface region of ion-implanted, position-sensitive detectors used in heavy-ion studies may lead to marked high energy tailing effects being recorded in the energy spectra. This results predominantly from the lower value for dE/dx in the dead layer with a small contribution from a reduction of the recombination component of the pulse height defect. Knowledge of the crystal orientation of the detector material and care in the associated alignment are demanded, especially when used in detection geometries having a large angular acceptance, where the particle angle of incidence varies considerably across the active length of the position-sensitive detector. (orig.)