Trace elemental analysis of C, N, O in silicon nitride with X-ray fluorescence spectrometry

X-ray fluorescence analysis (XRF) is one of the ideal quantitative analytical methods for slightly soluble materials such as fine ceramics. In this study, non-destructive quantitative analyses of C, N, and O in silicon nitride were investigated by XRF especially regarding sample preparations and measurement conditions. Standard silicon nitride powders were made into briquettes and measured with a wavelength dispersive X-ray fluorescence spectrometer. In this measurement system, main error sources were decreasing vacuum level of the sample chamber and the absorption of contaminations of the surface of briquettes. However, results indicated that quantitative analysis of C, N and O are possible by setting up calibrations. (author)