Published 2010 | Version v1
Miscellaneous

Charge accumulation under exposure of ionizing radiation in silicon-on-insulator structure with nitrided SiO2

  • 1. Inst. Fiziki Poluprovodnikov Sibirskogo Otdeleniya RAN, Novosibirsk (Russian Federation)

Description

no abstract available

Part of:
Summaries of reports of 40th International conference on physics of interactions of charged particles with crystals

Additional details

Additional titles

Original title (Russian)
Аккумуляция зарядов под действием ионизирующего излучения в структурах кремний-на-изоляторе с азотированным SiO

Publishing Information

Publisher
Universitetskaya kniga
Imprint Place
Moscow (Russian Federation)
Imprint Title
Summaries of reports of 40th International conference on physics of interactions of charged particles with crystals
Imprint Pagination
226 p.
Journal Page Range
p. 47
Report number
INIS-RU--527

Conference

Title
40. International conference on physics of interaction of charged particles with crystals
Original Conference Title
XL mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
Dates
25-27 May 2010
Place
Moscow (Russian Federation)

Optional Information

Notes
Imprint:Tezisy dokladov 40. mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami