Semiconductor processing
Description
The impact of ion implantation on present day semiconductor device processing and future applications to simplify and improve processing are described. So far implantation has generally been used to introduce electrically active dopants into the semiconductor but it can also be used to improve other stages of the technology of making semiconductor devices. Ion implantation can be used to improve masks, etching, step coverage, and slice distortion and such applications are reviewed. The many processes involved in making semiconductor devices interact in a complex way. Apparently small changes, such as replacing depositions by implantation, can lead to unsatisfactory device properties unless significant changes are made in subsequent processing. The complex interactions make the design of new processes critical if optimum properties are to be achieved. Special constraints can be placed on the implantation process itself. Examples are given of these interactions. (author)
Additional details
Publishing Information
- Journal Title
- Radiat. Eff.
- Journal Volume
- 44
- Journal Issue
- 1-4
- Series
- Radiat. Eff.
- Journal Page Range
- 111-120
- ISSN
- 0033-7579
Conference
- Title
- 2. international conference on ion implantation equipment.
- Dates
- 28 - 31 Aug 1978.
- Place
- Povo-Trento, Italy.
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 11544451
- Subject category
- S07: ISOTOPES AND RADIATION SOURCES; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- FABRICATION; INDUSTRY; ION IMPLANTATION; SEMICONDUCTOR DEVICES; SPECIFICATIONS