Published 1979 | Version v1
Journal article

Semiconductor processing

  • 1. Philips Research Labs., Redhill (UK)

Description

The impact of ion implantation on present day semiconductor device processing and future applications to simplify and improve processing are described. So far implantation has generally been used to introduce electrically active dopants into the semiconductor but it can also be used to improve other stages of the technology of making semiconductor devices. Ion implantation can be used to improve masks, etching, step coverage, and slice distortion and such applications are reviewed. The many processes involved in making semiconductor devices interact in a complex way. Apparently small changes, such as replacing depositions by implantation, can lead to unsatisfactory device properties unless significant changes are made in subsequent processing. The complex interactions make the design of new processes critical if optimum properties are to be achieved. Special constraints can be placed on the implantation process itself. Examples are given of these interactions. (author)

Additional details

Publishing Information

Journal Title
Radiat. Eff.
Journal Volume
44
Journal Issue
1-4
Series
Radiat. Eff.
Journal Page Range
111-120
ISSN
0033-7579

Conference

Title
2. international conference on ion implantation equipment.
Dates
28 - 31 Aug 1978.
Place
Povo-Trento, Italy.

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
11544451
Subject category
S07: ISOTOPES AND RADIATION SOURCES; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
FABRICATION; INDUSTRY; ION IMPLANTATION; SEMICONDUCTOR DEVICES; SPECIFICATIONS