Subsurface defects structural evolution in nano-cutting of single crystal copper
Creators
- 1. Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China)
- 2. School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China)
Description
Highlights: • An innovative analysis method is adopted to analyze nano-cutting process accurately. • A characteristic SFT and stair-rod dislocation are found in subsurface defect layer. • The formation mechanism of stair-rod dislocation is investigated. • The local atomic structure of subsurface defects is introduced. - Abstract: In this work, molecular dynamics simulation is performed to study the subsurface defects structural distribution and its evolution during nano-cutting process of single crystal copper. The formation mechanism of chip and machined surface is interviewed by analyzing the dislocation evolution and atomic migration. The centro-symmetry parameter and spherical harmonics method are adopted to characterize the distribution and evolution of the subsurface defect structures and local atomic structures. The results show that stacking faults, dislocation loops, "V-shaped" dislocation loops, and plenty of point defects are formed during the machined surface being formed in shear-slip zone. In subsurface damage layers, stair-rod dislocation, stacking fault tetrahedra, atomic cluster defect, and vacancy defect are formed. And the formation mechanism of stair-rod dislocation is investigated by atomic-scale structure evolution. The local atomic structures of subsurface defects are icosahedrons, hexagonal close packed, body-centered cubic, and defect face center cubic, and the variations of local atomic structures are investigated
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2015.03.061Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2015.03.061;
- PII
- S0169-4332(15)00638-8;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 344
- Journal Page Range
- p. 38-46
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47037822
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC CLUSTERS; BCC LATTICES; COPPER; CUTTING; DAMAGE; DEFECTS; DISLOCATIONS; DISTRIBUTION; HCP LATTICES; LAYERS; MIGRATION; MOLECULAR DYNAMICS METHOD; MONOCRYSTALS; SIMULATION; SPHERICAL HARMONICS METHOD; SURFACES; SYMMETRY; VACANCIES
- Descriptors DEC
- APPROXIMATIONS; CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CRYSTALS; CUBIC LATTICES; ELEMENTS; HEXAGONAL LATTICES; LINE DEFECTS; MACHINING; METALS; POINT DEFECTS; THREE-DIMENSIONAL LATTICES; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.