Defect levels in p-type silicon doped with manganese

Manganese was diffused into p+pn+ silicon diodes at temperatures ranging from 900 to 11500C for different times under various quenching conditions. By use of transient capacitance spectroscopy, five hole traps associated with manganese in these structures were observed. These defect levels are located at E/sub v/+0.17 eV, E/sub v/+0.33 eV, E/sub v/+0.33 eV, E/sub v/+0.44 eV, and E/sub v/+0.51 eV. The formation of the E/sub v/+0.44 eV and E/sub v/+0.51 eV defect levels depends upon the quenching rate of the devices from the diffusion temperatures. It was observed that the electron irradiation of the manganese-diffused p+pn+ silicon junctions does not produce the characteristic radiation-induced defects seen in boron-doped silicon. The behavior of these defects under heat treatment and their capture cross section for majority carriers are presented