Hardness variability in commercial and hardened technologies
Description
Over the past 10 years, there have been a number of advances in methods to assess and assure the radiation hardness of microelectronics in military and space applications. At the forefront of these is the Qualified Manufacturers List (QML) methodology, in which the hardness of product is ''built-in'' through statistical process control (SPC) of technology parameters relevant to the radiation response, test structure to integrated circuit (IC) correlations, and techniques for extrapolating laboratory test results to varying radiation scenarios. At the same time, there has been renewed interest in the use of commercial technology -- with its enhanced performance, reduced cost, and higher reliability -- in military and space systems. In this paper, we initially demonstrate the application of QML techniques to assure and control the radiation response of hardened technologies. Through several examples, we demonstrate intra-die, wafer-to-wafer, and lot-to-lot variations in a hardened technology. We observe 10 to 30% variations in key technology parameters that result from variability in geometry, process, and design layout. Radiation-induced degradation is seen to mirror preirradiation characteristics. We then evaluate commercial technologies and report considerably higher variability in radiation hardness, i.e., variations by a factor of two to five. This variability is shown to arise from a lack of control of technology parameters relevant to the radiation response, which a commercial manufacturer has no interest in controlling in a normal process flow
Availability note (English)
MF available from INIS under the Report Number; Also available from OSTI as DE94007270; NTIS; US Govt. Printing Office Dep.Files
25056214.pdf
Files
(409.3 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:a640908b56452ffb09ab35456ae40983
|
409.3 kB | Preview Download |
Additional details
Publishing Information
- Imprint Pagination
- 4 p.
- Report number
- SAND--94-0532C
Conference
- Title
- 31. annual international nuclear and space radiation effects conference.
- Dates
- 18-22 Jul 1994.
- Place
- Tucson, AZ (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 25056214
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COBALT 60; EVALUATION; MICROELECTRONIC CIRCUITS; RADIATION DOSES; RADIATION HARDENING; SILICON
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; ELECTRONIC CIRCUITS; ELEMENTS; HARDENING; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MINUTES LIVING RADIOISOTOPES; NUCLEI; ODD-ODD NUCLEI; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; RADIOISOTOPES; SEMIMETALS; YEARS LIVING RADIOISOTOPES
Optional Information
- Contract/Grant/Project number
- Contract AC04-94AL85000
- Funding organization
- USDOE, Washington, DC (United States); Defense Nuclear Agency, Washington, DC (United States).
- Secondary number(s)
- CONF-940726--1.