Published October 1, 2005 | Version v1
Journal article

Structure and photoluminescence of Mn-passivated nanocrystalline ZnO:S thin films

  • 1. Graduate School of the Chinese Academy of Sciences (China)
  • 2. Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)
  • 3. Center for Advanced Opto-electronic Functional Material Research, Northeast Normal University, Changchun 130024 (China)

Description

Mn-passivated nanocrystalline ZnO:S thin films were fabricated by thermally oxidizing Mn-doped ZnS (ZnS:Mn) films prepared by electron beam evaporation. Mn was introduced to passivate the surface defects of ZnO and to improve the optical properties. X-ray diffraction (XRD) and photoluminescence (PL) spectra at 81.9 K indicated the S content in ZnO thin film gradually decreased with increasing annealing temperature. The fitted result of the temperature-dependent PL spectra in the range from 81.9 to 302.2 K showed that S dopant could broaden the optical band gap energy of ZnO. Room temperature PL spectra confirmed that the ultraviolet peak shifted to lower energy with the decrease of S content in the thin film because of the Burstein-Moss effect

Additional details

Identifiers

DOI
10.1016/j.physb.2005.06.022;
PII
S0921-4526(05)00838-0;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
367
Journal Issue
1-4
Journal Page Range
p. 223-228
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.