Published October 2011
| Version v1
Journal article
Characterization of HPGe detector with Monte Carlo method
Description
Verifying calculational model of detector is important to calculate its detection efficiency with Monte Carlo method. HPGe detector crystal dead layer thickness and cold finger size were determined by Monte Carlo simulation along with experiment. The results show that when the crystal dimensions determined are used to calculate the detection efficiency, in the energy range of 59.54-1408.1 keV the relative deviation between simulated and experimental results is under 5%, which is validated by some experiments. (authors)
Additional details
Publishing Information
- Journal Title
- Atomic Energy Science and Technology
- Journal Volume
- 45
- Journal Issue
- 10
- Journal Page Range
- p. 1266-1269
- ISSN
- 1000-6931
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 45068403
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COMPUTERIZED SIMULATION; CRYSTALS; DETECTION; EFFICIENCY; FINGERS; HIGH-PURITY GE DETECTORS; KEV RANGE 100-1000; KEV RANGE 10-100; LAYERS; MONTE CARLO METHOD; THICKNESS
- Descriptors DEC
- ARMS; BODY; CALCULATION METHODS; DIMENSIONS; ENERGY RANGE; GE SEMICONDUCTOR DETECTORS; HANDS; KEV RANGE; LIMBS; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SIMULATION
Optional Information
- Notes
- 4 figs., 2 tabs., 6 refs.