Published 2011
| Version v1
Miscellaneous
On the Characterization of Boron in BGaAs Nano Films Using IBA Techniques
- 1. Physics Dept. Beirut Arab University, (Lebanon)
- 2. Accelerator Laboratory, Lebanese Atomic Energy Commission, (Lebanon)
- 3. Multi material Laboratory, (France)
Description
In this work, the capability of the proton Induced γ-ray Emission (PIGE) technique to monitor a rapid, nondestructive and quantification of Boron in ultra-thin films of BxGa1-xAs deposited on GaAs substrate using MOCVD is discussed. In order to improve the sensitivity for B detection, a systematic study was undertaken using proton induced beam at three different energies (from 1.7, 2.4 and 3 MeV) with different tilting angles (0, 60'deg' and 80'deg'). Best conditions were found to be at 1.7 MeV and at 80'deg' for proton energy and tilting angle within ten minutes of acquisition time. (author)
Availability note (English)
Available from LAECAdditional details
Publishing Information
- Publisher
- Trans Tech Publications
- Imprint Place
- Switzerland (Switzerland)
- Imprint Title
- Mediterranean Conference on Innovative Materials and Applications, Beirut-Lebanon, 15-17 March 2011, ch.1
- Imprint Pagination
- 226 p.
- Journal Page Range
- p. 314-317
Conference
- Title
- Mediterranean Conference on Innovative Materials and Applications (CIMA)
- Dates
- 15-17 Mar 2011
- Place
- Beirut (Lebanon)
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Lebanon
- INIS RN
- 43032029
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- BEAMS; BORON; EMISSION; PROTONS; THIN FILMS
- Descriptors DEC
- BARYONS; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; FILMS; HADRONS; NUCLEONS; SEMIMETALS
Optional Information
- Notes
- 4 figs.; 15 refs.