Published March 2016 | Version v1
Journal article Metadata-only

Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

Creators

  • 1. Department of Electrical and Computer Engineering, Duke University, Durham, NC, 27708 (United States)
  • 2. Department of Physics, Duke University, Durham, NC, 27708 (United States)
  • 3. CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari (Italy)

Description

Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE)-grown InAlN/GaN heterostructures with varying indium composition. We find that the internal electric field resulting from polarization must be taken into account when analyzing the XPS data. Valence band offsets of 0.12 eV for In0.18Al0.82N, 0.15 eV for In0.17Al0.83N, and 0.23 eV for In0.098Al0.902N with GaN are obtained. The results show that a compositional-depended bowing parameter is needed in order to estimate the valence band energies of InAlN as a function of composition in relation to those of the binary endpoints, AlN and InN.

Additional details

Identifiers

DOI
10.1063/1.4944502;

Publishing Information

Journal Title
AIP Advances
Journal Volume
6
Journal Issue
3
Journal Page Range
p. 035211-035211.7
ISSN
2158-3226
CODEN
AAIDBI

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
48057802
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM NITRIDES; CONCENTRATION RATIO; ELECTRIC FIELDS; GALLIUM NITRIDES; INDIUM COMPOUNDS; INDIUM NITRIDES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; POLARIZATION; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY
Descriptors DEC
ALUMINIUM COMPOUNDS; BEAMS; CRYSTAL GROWTH METHODS; DIMENSIONLESS NUMBERS; ELECTRON SPECTROSCOPY; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PNICTIDES; SPECTROSCOPY

Optional Information

Notes
(c) 2016 Author(s)