Published October 15, 2007
| Version v1
Journal article
Electrical and optical properties of ZnO:Mn thin films grown by MOCVD
- 1. Material Science Department, Tbilisi State University, 3, Chavchavdze Ave.2801, Tbilisi, Georgia (United States)
- 2. Groupe d'Etudes de la Matiere Condensee, CNRS-Universite de Versailles Saint Quentin en Yvelines, 1 Pl. Aristide Briand, 92195 Meudon Cedex (France)
Description
Diluted magnetic semiconductor epitaxial thin films of Zn1-xMnxO have been grown on c-sapphire by the MOCVD technique. Variations of a and c lattice parameters follow Vegard's law and attest to the incorporation of substitutional Mn2+ ions. Carrier concentration (n-type) and electron mobility were studied versus temperature for different concentrations of manganese. Incorporation of manganese leads to the opening of the band gap, observed as a blue shift in energy regarding pure ZnO
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2007.03.133Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2007.03.133;
- PII
- S0040-6090(07)00469-5;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 515
- Journal Issue
- 24
- Journal Page Range
- p. 8519-8523
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 1. international symposium on transparent conducting oxides
- Dates
- 23-26 Oct 2006
- Place
- Crete (Greece)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39071021
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; EPITAXY; LATTICE PARAMETERS; MAGNETIC SEMICONDUCTORS; MANGANESE; MANGANESE IONS; OPTICAL PROPERTIES; SAPPHIRE; THIN FILMS; VEGARD LAW; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CHEMICAL COATING; CORUNDUM; CRYSTAL GROWTH METHODS; DEPOSITION; ELEMENTS; FILMS; IONS; MATERIALS; METALS; MINERALS; MOBILITY; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SURFACE COATING; TRANSITION ELEMENTS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.