Motion of dislocations in silicon carbide crystals introduced by surface mechanical damage

Motion of dislocations in alpha-SiC heat-treated monocrystals, generated in the process of scratching by diamond cutting tool on the surface (0001)C has been studied. It is ascertained that noticeable dispersion of the dislocations takes place only at the temperatures of annealing T0≥1800 deg C, it is realized mainly by sliding and depends on crystallographic orientation of the scratches and density, as well as on the distribution of initial growth dislocations. A decrease in dislocation mobilities in crystals, irradiated by great doses of reactor neutrons (Φ=1020cm-2) is detected. The dislocation braking at T>1800 deg C, as well as after neutron irradiation, is related to the atmosphere of nonequilibrium point defects