Determination of thicknesses of anode oxides on crystal and broken silicon substrates by the method of interference spectroscopy of reflection

A method is described of interference spectroscopy of reflection at the constant angle of incidence in the optical range of 0.2 - 1.6 μm. The method is used for determination of thicknesses of anode oxide layers on crystalline and broken (ion implanted) silicon. Experimental and calculational reflection spectra are presented. They agree with the accuracy of 10 - 15% in the all used optical range. The expression is obtained for calculation of the Si removed layer thickness when etching an oxide layer in the process of the layer-by-layer analysis of a surface. 25 refs., 5 refs