Growth and characterization of inclusion-free CdMgTe single crystals using modified Bridgman method

CdMgTe crystal is a hopeful room temperature radiation detection material because of some potential advantages. The Cd_0.95Mg_0.05Te ingot with free of inclusion was successfully grown by a modified Bridgman method in this paper. This results was achieved by using a significant excess cadmium and in situ annealing during the growth process. The grown ingot was about 30 mm in diameter and 120 mm in length. The CdMgTe crystal had a cubic zinc-blende structure. The distribution of Mg element along growth direction was homogeneous. In the whole ingot, no inclusions were observed in IR images and as high IR transmittance as above 60% was measured. Raman scattering spectroscopy showed a good crystal quality for CdMgTe crystals. Moreover, the resistivity with 10⁹ Ω cm order of magnitudes for the ingot could be useful for the fabrication of room temperature radiation detector.