Study of Bi-Sr-Ca-O system thin films on Si, SiC and MgO substrates at different temperatures of annealing

Change of structure of Bi-Sr-Ca-Cu-O compound films, applied by ion sputtering on MgO, Si and SiC monocrystal surfase, was investigated by the method of average energy ion scattering. Lamination of films, applied on Si and SiC, takes place at annealing temperature t>600 deg C. The phase, enriched with bismuth (Bi2Sr2CuO6 presumably) prevails near the surface, and the phase, enriched with light elements with possible copper diffusion into substrate boundary. Film substance on SiC diffuses into the substrate at 880 deg C, whereas film on Si fuses into drops. Film of MgO laminates weakly under heating up to 700 deg C; possibility of epitaxial crystallization with formation of textured structure is preserved at 880 deg C