Formation of (Ga,Mn)As nanowires and study of their magnetic properties

The molecular-beam epitaxy technique is used to synthesize arrays of (Ga,Mn)As nanowire crystals on a GaAs (111)B surface in the growth-temperature range 480–680°C. It is established that the formation of (Ga,Mn)As nanowires can be described in the context of a vapor-liquid-crystal mechanism. It is shown that the growth of (Ga,Mn)As nanowires must occur in conditions stabilized with respect to Ga. It is found that the field and temperature dependences of the static magnetic susceptibility for samples produced at the temperature 660°C exhibit paramagnetic behavior.