Diffusion behavior of hydrogen isotopes in tungsten revisited by molecular dynamics simulations
- 1. Key Laboratory for Radiation Physics and Technology (Ministry of Education), Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064 (China)
Description
Molecular dynamics simulations were performed to study the diffusion behavior of hydrogen isotopes in single-crystal tungsten in the temperature range of 300–2000 K. The simulations show that the diffusion coefficient of H isotopes exhibits non-Arrhenius behavior, though this deviation from Arrhenius behavior is slight. Many-body and anharmonic effects of the potential surface may induce slight isotope-dependence by the activation energy; however, the dependence of the pre-factor of the diffusion coefficient on the isotope mass is diminished. The simulation results for H-atom migration near W surfaces suggest that no trap mutations occur for H atoms diffusing near either W{100} or W{111} surfaces, in contrast to the findings for He diffusion near W surfaces. Based on the H behavior obtained by our MD simulations, the time evolution of the concentration distribution of interstitial H atoms in a semi-infinite W single crystal irradiated by energetic H projectiles was calculated. The effect of H concentration on H diffusion is discussed, and the applicability of the diffusion coefficients obtained for dilute H in W is assessed. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/27/7/073103Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 27
- Journal Issue
- 7
- Journal Page Range
- [8 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52036429
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACTIVATION ENERGY; DIFFUSION; HYDROGEN ISOTOPES; INTERSTITIALS; MANY-BODY PROBLEM; MOLECULAR DYNAMICS METHOD; MONOCRYSTALS; SIMULATION; SURFACES; TEMPERATURE DEPENDENCE; TRAPS; TUNGSTEN
- Descriptors DEC
- CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; ENERGY; ISOTOPES; METALS; POINT DEFECTS; REFRACTORY METALS; TRANSITION ELEMENTS