Published January 2016 | Version v1
Journal article

Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors

  • 1. Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States)
  • 2. Physics of Nanostructured Materials, University of Vienna, 1090 Vienna (Austria)
  • 3. Department of Mechanical Engineering, Stanford University, Stanford, California 94305 and Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

Description

Tetrakisdimethylamido (TDMA) based precursors are commonly used to deposit metal oxides such as TiO2, ZrO2, and HfO2 by means of chemical vapor deposition and atomic layer deposition (ALD). Both thermal and plasma enhanced ALD (PEALD) have been demonstrated with TDMA-metal precursors. While the reactions of TDMA-type precursors with water and oxygen plasma have been studied in the past, their reactivity with pure O2 has been overlooked. This paper reports on experimental evaluation of the reaction of molecular oxygen (O2) and several metal organic precursors based on TDMA ligands. The effect of O2 exposure duration and substrate temperature on deposition and film morphology is evaluated and compared to thermal reactions with H2O and PEALD with O2 plasma

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Journal Volume
34
Journal Issue
1
Journal Page Range
vp.
ISSN
0734-2101
CODEN
JVTAD6

Optional Information

Notes
(c) 2015 American Vacuum Society