Published April 4, 1983
| Version v1
Journal article
Distance dependence of electronic energy transfer to semiconductor surfaces: 3nπ /sup / pyrazine/GaAs(110)
- 1. Department of Chemistry and Materials and Molecular Research, Division of Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
Description
Energy transfer from 3nπ* pyrazine to GaAs(110) has been studied. Within experimental error, a classical dielectric model quantitatively reproduces measurements of the distance-dependent lifetime for emitter-surface separations from 430 to 20 A. Analysis of the energy transfer shows that the molecular electronic excitation is dissipated through the creation of electron-hole pairs in the solid by the high--wave-vector components of the dipole near field
Additional details
Publishing Information
- Journal Title
- Phys. Rev. Lett.
- Journal Volume
- 50
- Journal Issue
- 14
- Series
- Phys. Rev. Lett.
- Journal Page Range
- 1092-1094
- ISSN
- 0031-9007
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 14791790
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ENERGY TRANSFER; GALLIUM ARSENIDES; LASERS; LIFETIME; PHOSPHORESCENCE; PYRAZINES; SURFACE PROPERTIES; THEORETICAL DATA
- Descriptors DEC
- AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; AZINES; DATA; EQUIPMENT; GALLIUM COMPOUNDS; HETEROCYCLIC COMPOUNDS; INFORMATION; LUMINESCENCE; NUMERICAL DATA; ORGANIC COMPOUNDS; ORGANIC NITROGEN COMPOUNDS