Production of multiply charge-state ions in a multicusp ion source
- 1. Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
Description
High charge state ion beams are commonly used in atomic and nuclear physics experiments. Multiply charged ions are normally produced in an ECR or in an EBIS. Multicusp generators can confine primary electrons very efficiently. Therefore, the electrical and gas efficiencies of these devices are high. Since the magnetic cusp fields are localized near the chamber wall, large volumes of uniform and high density plasmas can be obtained at low pressure, conditions favorable for the formation of multiply charged state ions. Attempts have been made at LBNL to generate multiply charged ion beams by employing a 25-cm diam by 25-cm long multicusp source. Experimental results demonstrated that charge states as high as 7+ can be obtained with argon or xenon plasmas. Multiply charged metallic ions such as tungsten and titanium have also been successfully formed in the multicusp source by evaporation and sputtering processes. In order to extend the charge state to higher values, a novel technique of injecting high energy electrons into the source plasma is proposed. If this is successful, the multicusp source will become very useful for radioactive beam accelerators, ion implantation, and nuclear physics applications. copyright 1996 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Review of Scientific Instruments
- Journal Volume
- 67
- Journal Issue
- 3
- Journal Page Range
- p. 1384-1386.
- ISSN
- 0034-6748
- CODEN
- RSINAK
Conference
- Title
- 6. international conference on ion sources.
- Dates
- 10-16 Sep 1995.
- Place
- Whistler (Canada).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27076503
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARGON IONS; BEAM PRODUCTION; CHARGE STATES; CUSPED GEOMETRIES; EVAPORATION; ION SOURCES; MULTICHARGED IONS; SPUTTERING; TITANIUM IONS; TUNGSTEN IONS; XENON IONS
- Descriptors DEC
- CHARGED PARTICLES; IONS; MAGNETIC FIELD CONFIGURATIONS; OPEN CONFIGURATIONS; PHASE TRANSFORMATIONS
Optional Information
- Secondary number(s)
- CONF-9509125--.