Published December 1991
| Version v1
Journal article
The study of plasma anodization for silicon oxide growth
Creators
- 1. East China Normal University, Department of Electronic Science and Technology (China)
Description
Plasma anodization is an advanced technique for oxidation of semiconductor materials. The progress of this technique is reviewed, its main advantages and difficulties are pointed out, and the special work done by the authors are presented. A detailed description of RF stimulated DC discharge mode, which was developed in the laboratory, and a sketch of equipment according to this mode are given. Anodizing process is conducted with this equipment and used successfully for gate oxide in MOSFET
Additional details
Publishing Information
- Journal Title
- Journal of East China Normal University. Natural Science
- Journal Issue
- no.4
- Journal Page Range
- p. 49-53.
- ISSN
- 1000-5641
- CODEN
- HSZKEO
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 24037636
- Subject category
- S36: MATERIALS SCIENCE; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- ANODIZATION; EVALUATION; MOSFET; PLASMA; SEMICONDUCTOR DEVICES; SILICON
- Descriptors DEC
- CHEMICAL COATING; CORROSION PROTECTION; DEPOSITION; ELECTROCHEMICAL COATING; ELECTROLYSIS; ELEMENTS; FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; SEMIMETALS; SURFACE COATING; TRANSISTORS